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1

The K3[Fe(CN)6]—KOHH2O photoetchant for InP

R. Srnánek, A. Šatka, K. Seidel

Journal:

Crystal Research and Technology

Year:

1988

Language:

english

File:

PDF, 255 KB

english, 1988

2

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Annealing behaviour of low temperature grown GaAs investigated by SIMS

Vincze, A., Kovac, J., Srnanek, R.

Year:

2006

Language:

english

File:

PDF, 4.11 MB

english, 2006

3

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Annealing behavior of low temperature grown GaAs investigated by raman spectroscopy

Vincze, A., Kovac, J., Srnanek, R., Sigmund, J., Hartnagel, H.L., Irmer, G.

Year:

2004

Language:

english

File:

PDF, 1.04 MB

english, 2004

4

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Pentacene OTFT with parylene gate dielectric

Jakabovic, Jan, Kovac, Jaroslav, Srnanek, Rudolf, Kovac, Jaroslav, Sokolsky, Michal, Hasko, Daniel

Year:

2008

Language:

english

File:

PDF, 1.29 MB

english, 2008

5

Dielectric Properties of Boron Nitride in THz Region Synthesized with Nonenergetic CVD

Janek, Marián, Vincze, Andrej, Darmo, Juraj, Szöcs, Vojtech, Matejdes, Marián, Zacher, Tomáš, Kavecký, Štefan, Danielik, Vladimír, Velič, Dusan, Lorenc, Dušan, Srnánek, Rudolf, Šatka, Alexander, Haško

Journal:

International Journal of Applied Ceramic Technology

Year:

2013

Language:

english

File:

PDF, 429 KB

english, 2013

6

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - X-ray diffraction characterization of Low Temperature grown GaAs/InP epilayers

Ferrari, C., Dubecky, F., Kudela, R., John, J., Srnanek, R.

Year:

2006

Language:

english

File:

PDF, 3.37 MB

english, 2006

7

Study of Niobium Nitride Films Produced by DC Reactive Magnetron Sputtering

I. Hotovy, D. Buc, J. Brcka, R. Srnanek

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 280 KB

english, 1997

8

Cross-sectional and surface Raman mapping of thick GaN layers

R. Korbutowicz, M. Tłaczała, J. Kovač, G. Irmer, R. Srnanek

Journal:

Crystal Research and Technology

Year:

2008

Language:

english

File:

PDF, 168 KB

english, 2008

9

Revealing of defects in {110} InP

R. Srnánek, A. Šatka

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 525 KB

english, 1993

10

Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE

R. Srnánek, Š. Németh, J. Kováč, S. Kičin, B. Grietens, G. Borghs, J. Novák, V. Šestáková, L. Pekárek

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 518 KB

english, 1996

11

Investigation of graded InxGa1−xP buffer by Raman scattering method

L. Peternai, J. Kováč, G. Irmer, S. Hasenöhrl, J. Novák, R. Srnánek

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 304 KB

english, 2006

12

Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy

R. Srnanek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Microelectronics Journal

Year:

2008

Language:

english

File:

PDF, 696 KB

english, 2008

13

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures

R. Srnanek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Microelectronics Journal

Year:

2008

Language:

english

File:

PDF, 414 KB

english, 2008

14

Accurate carrier profiling of n-type GaAs junctions

T. Clarysse, G. Brammertz, D. Vanhaeren, P. Eyben, J. Goossens, F. Clemente, M. Meuris, W. Vandervorst, R. Srnanek, R. Kinder, B. Sciana, D. Radziewicz, Zhiqiang Li

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 452 KB

english, 2008

15

Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

R Srnanek, J Geurts, M Lentze, G Irmer, D Donoval, P Brdecka, P Kordos, A Förster, B Sciana, D Radziewicz, M Tlaczala

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 201 KB

english, 2004

16

Micro-Raman study of photoexcited plasma in GaAs bevelled structures

R. Srnanek, G. Irmer, J. Geurts, M. Lentze, D. Donoval, B. Sciana, D. Radziewicz, M. Tlaczala, M. Florovic, I. Novotny

Journal:

Applied Surface Science

Year:

2005

Language:

english

File:

PDF, 403 KB

english, 2005

17

Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

R. Srnanek, G. Irmer, D. Donoval, I. Novotny, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 1005 KB

english, 2008

18

Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion

R. Srnanek, J. Jakabovic, E. Dobrocka, G. Irmer, U. Heinemeyer, K. Broch, F. Schreiber, A. Vincze, V. Machovic, J. Kovac, D. Donoval

Journal:

Chemical Physics Letters

Year:

2010

Language:

english

File:

PDF, 412 KB

english, 2010

19

AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE

Beata Ściana, Iwona Zborowska-Lindert, Damian Radziewicz, Bogusław Boratyński, Marek Tłaczała, Jaroslav Kováč, Rudolf Srnanek, Jaroslava Škriniarová, Martin Florovič

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 1.28 MB

english, 2008

20

Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE

H. Behmenburg, C. Giesen, R. Srnanek, J. Kovac, H. Kalisch, M. Heuken, R.H. Jansen

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 839 KB

english, 2011

21

Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer

R. Kinder, A. Vincze, M. Kuruc, R. Srnánek, B. Lojek, B. Sopko, D. Chren

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 159 KB

english, 2006

22

Characterisation of titanium disilicide thin films

A. Šatka, J. Liday, R. Srnánek, A. Vincze, D. Donoval, J. Kováč, M. Veselý, M. Michalka

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 961 KB

english, 2006

23

Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors

J. Jakabovič, J. Kováč, M. Weis, D. Haško, R. Srnánek, P. Valent, R. Resel

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 339 KB

english, 2009

24

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor

J. Kováč, J. Škriniarová, M. Florovič, J. Jakabovič, J. Chovan, R. Srnánek, A. Vincze, B. Ściana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczała

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 497 KB

english, 2009

25

Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

R. Srnanek, J. Geurts, M. Lentze, G. Irmer, J. Kovac, D. Donoval, D.S. Mc Phail, P. Kordos, M. Florovic, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

26

Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples

R. Srnanek, M. Vesely, A. Vincze, M. Florovic, J. Kovac, G. Irmer, P. Prunici, D.S. Mc Phail, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Year:

2005

Language:

english

File:

PDF, 250 KB

english, 2005

27

RF diode reactive sputtering of n- and p-type zinc oxide thin films

V. Tvarozek, K. Shtereva, I. Novotny, J. Kovac, P. Sutta, R. Srnanek, A. Vincze

Journal:

Year:

2007

Language:

english

File:

PDF, 205 KB

english, 2007

28

Structural changes studies of a-Si:H films deposited by PECVD under different hydrogen dilutions using various experimental techniques

Veronika Vavruňková, Jarmila Müllerová, Rudolf Srnánek, Pavol Šutta

Journal:

Year:

2009

Language:

english

File:

PDF, 254 KB

english, 2009

29

Thermal stability of NbN films deposited on GaAs substrates

I Hotový, J Huran, D Búc, R Srnánek

Journal:

Year:

1998

Language:

english

File:

PDF, 388 KB

english, 1998

30

Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

R Srnanek, P Gurnik, L Harmatha, I Gregora

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 173 KB

english, 2001

31

A computer controlled chemical bevel etching apparatus: applications to Auger analysis of multi-layered structures

M El-Gomati, A Gelsthorpe, R Srnanek, J Liday, P Vogrincic, J Kovac

Journal:

Applied Surface Science

Year:

1999

Language:

english

File:

PDF, 101 KB

english, 1999

32

A Raman study of GaAsN, GaInAsN layers on bevelled samples

R. Srnanek, A. Vincze, J. Kovac, I. Gregora, D.S. Mc Phail, V. Gottschalch

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 215 KB

english, 2002

33

Chemical bevelling of GaAs-based structures

R Srnanek, I Novotny, I Hotovy, M.El Gomati

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 174 KB

english, 1997

34

Chemical bevelling of CdTe and CdTe/MnTe structures

R Srnanek, A Bonanni, H Sitter, J Liday, I Novotny

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 413 KB

english, 1998

35

Epitaxial character of in growth at annealed ZnO/InP(110) interfaces

J. Kečkéš, B. Ortner, I. Červeń, J. Jakabovič, J. Kováč, R. Srnánek, I. Novotný, V. Tvarožek

Journal:

physica status solidi (a)

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

36

Micro-photoluminescence on bevelled samples – a method of assessing δ-doped layer

R. Srnanek, J. Kovac, R. Kinder, J. Geurts, L. Peternai, D. S. Mc Phail, S. Fearn, R. J. Chater, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 166 KB

english, 2003

37

Surface and interface analysis of iodine-doped pentacene structures for OTFTs

J. Jakabovič, A. Vincze, J. Kováč, R. Srnánek, J. Kováč Jr, E. Dobročka, D. Donoval, U. Heinemeyer, F. Schreiber, V. Machovič, F. Uherek

Journal:

Surface and Interface Analysis

Year:

2011

Language:

english

File:

PDF, 179 KB

english, 2011

38

Effects of thermal annealing on the properties of niobium nitride thin films

I. Hotovy, R. Srnanek, D. Buc

Journal:

Journal of Materials Science Letters

Year:

1994

Language:

english

File:

PDF, 568 KB

english, 1994

39

Detection of lattice defects in InP and (InGa)As using selective photoetching

V. Gottschalch, R. Srnanek, G. Wagner

Journal:

Journal of Materials Science Letters

Year:

1982

Language:

english

File:

PDF, 2.35 MB

english, 1982

40

Observation of dislocation etch pits on (001) InGaAsP (λ= 1.3µm)

R. Srnanek, S. Nandraska, J. Kovac

Journal:

Journal of Materials Science Letters

Year:

1987

Language:

english

File:

PDF, 1.09 MB

english, 1987

41

A method for diffusion coefficient determination of phosphorus in liquid indium

R. Srnánek, P. Hábovčík

Journal:

Journal of Crystal Growth

Year:

1979

Language:

english

File:

PDF, 282 KB

english, 1979

42

Chemical bevelling of InP-based structures by HBrH3PO4K2Cr2O7 solution

R. Srnanek, M.El Gomati, I. Novotny, D. Pudis

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 563 KB

english, 1997

43

MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1−xAs

B Ściana, D Radziewicz, B Paszkiewicz, M Tłaczała, M Utko, P Sitarek, G Sęk, J Misiewicz, R Kinder, J Kováč, R Srnanek

Journal:

Thin Solid Films

Year:

2002

Language:

english

File:

PDF, 403 KB

english, 2002

44

Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

R Srnanek, R Kinder, B Sciana, D Radziewicz, D.S McPhail, S.D Littlewood, I Novotny

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 135 KB

english, 2001

45

Surface and interface properties of thin pentacene and parylene layers

Andrej Vincze, Ján Jakabovič, Rudolf Srnánek, Alexander Šatka, Jaroslav Kovac

Journal:

Central European Journal of Physics

Year:

2009

Language:

english

File:

PDF, 4.25 MB

english, 2009

46

MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

B. Ściana, D. Radziewicz, D. Pucicki, I. Zborowska-Lindert, J. Serafińczuk, M. Tłaczała, M. Latkowska, J. Kováč, R. Srnanek

Journal:

Crystal Research and Technology

Year:

2012

Language:

english

File:

PDF, 509 KB

english, 2012

47

Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE

Quanzhong Jiang, Michael J. Edwards, Philip A. Shields, Duncan W. E. Allsopp, Christopher R. Bowen, Wang N. Wang, Lajos Tóth, Bela Pécz, Rudolf Srnanek, Alexander Satka, Jaroslav Kovac

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 736 KB

english, 2012

48

Identification of the crystalline-phases in thin pentacene layers by Raman spectroscopy

Rudolf Srnánek, Ján Jakabovič, Jaroslav Kováč, Jaroslav Kováč Jr., Daniel Haško, Alexander Šatka, Edmund Dobročka, Daniel Donoval

Journal:

Year:

2012

Language:

english

File:

PDF, 461 KB

english, 2012

49

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

Kovac, J., Jha, S. K., Jelenkovic, E. V., Kutsay, O., Pejovic, M., Surya, C., Zapien, J. A., Bello, I., Srnanek, R., Kovac, J., Flickyngerova, S.

Year:

2010

Language:

english

File:

PDF, 239 KB

english, 2010

50

Pentacene-Gate Dielectric Interface Modification with Silicon Nanoparticles for OTFTs

J. Jakabovic, J. Kovac, R. Srnanek, M. Weis, M. Sokolsky, K. Broch, F. Schreiber, D. Donoval, J. Cirak

Journal:

Physics Procedia

Year:

2012

Language:

english

File:

PDF, 877 KB

english, 2012

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